Directory of semiconductor devices. Handbook of Semiconductor Diodes
Aksenov A.I., Nefedov A.V. “Domestic semiconductor devices” SOLON-PRESS, 2008, 592 pp. 6th ed. (15.4 mb. djvu)
Presented guide to semiconductor devices contains information on basic electrical parameters and design features domestic bipolar and field-effect transistors, rectifier diodes, poles and blocks, as well as varicaps, zener diodes, stabilistors, thyristors, light-emitting and infrared diodes.
Tabular data containing the characteristics and parameters of linear scales and alphanumeric indicators, diode and transistor optocouplers are presented. To all components shown in the book element base semiconductor devices provides information on the corresponding analogues. The 6th edition additionally added a number of bipolar and field-effect transistors. The book is also equipped with a convenient search form for parameters of semiconductor devices of interest. The directory is aimed at radio amateurs and specialists involved in the design, operation and repair of radio-electronic devices.
ISBN 978-5-91359-043-5
SECTION 1. Symbols for semiconductor devices
1.1. System of symbols and classification of semiconductor devices
SECTION 2. Bipolar transistors
2.1. Letter designations parameters of bipolar transistors
2.2. Application of bipolar transistors
2.3. Bipolar germanium transistors
2.4. Bipolar Silicon Transistors
2.5. Bipolar silicon assemblies
SECTION 3. Field effect transistors
3.1. Letter designations for field-effect transistor parameters
3.2. Parameters and characteristics of field-effect transistors
3.3. Purpose of individual types of field-effect transistors
3.4. Field effect transistors
SECTION 4. Diodes
4.1. Types of devices and main parameters
4.2. Letter designations of diode parameters
4.3. Parameters of diodes, pillars and blocks
4.4. Varicap parameters
4.5. Parameters of zener diodes and stabilizers
SECTION 5.
5.1. Letter designations of thyristor parameters
5.2. Thyristor parameters
SECTION 6. Optoelectronic devices
6.1. Types of devices and letter designations of parameters
6.2. Parameters of light-emitting devices
6.3. Linear scale options
6.4. Parameters of alphanumeric indicators
6.5. Parameters of infrared emitting diodes
6.6. Parameters of diode optocouplers
6.7. Parameters of transistor optocouplers
SECTION 7. Analogues
7.1. Symbols and classification
7.2. Abbreviations for foreign companies
7.3. Letter designations of foreign transistors
7.4. Foreign transistors and their domestic analogues
7.5. Analogues of domestic transistors
7.6. Letter designations of foreign diodes
7.7. Foreign diodes, varicaps, zener diodes and their domestic analogues
7.8. Foreign thyristors and their domestic analogues
7.9. Foreign optoelectronic devices and their domestic analogues
7.10. Analogs of domestic diodes, varicaps and zener diodes
7.11. Analogs of domestic thyristors
7.12. Analogs of domestic optoelectronic devices
Alphanumeric index
Name: Semiconductor devices - Transistors - Directory.
The electrical parameters are given, dimensions, maximum operating data and other characteristics of domestic mass-produced transistors for wide application. For a wide range of specialists in electronics, automation, radio engineering, measuring equipment involved in development, operation and repair radio-electronic equipment.
Preface. eleven
PART ONE. GENERAL INFORMATION ABOUT BIPOLAR AND FIELD TRANSISTORS
Section one. Classification of bipolar and field-effect transistors. 12
1.1. Classification and notation system. 12
1.2. Classification of transistors by functional purpose. 16
1.3. Conditional graphic symbols. 16
1.4. Legend electrical parameters. 17
1.5. Basic standards for bipolar and field-effect transistors. 23
Section two. Features of the use of transistors in electronic equipment. 26
PART TWO. REFERENCE DATA OF BIPOLAR TRANSISTORS
Section three. Low-power, low-frequency transistors. 36
Section four. Low-power high-frequency transistors. 166
Section five. Low-power ultra-high-frequency transistors. 307
Section six. Transistors are powerful low-frequency. 453
Section seven. Powerful high-frequency transistors. 569
Section eight. Powerful ultra-high frequency transistors. 671
Section nine. Transistor assemblies. 770
PART THREE. Field Effect Transistor Reference Data
Section ten. Transistors are low-power. 812
Section eleven. Transistors are powerful. 870
Section twelve. Double transistors. 891
Alphanumeric index of transistors included in the reference book.
FEATURES OF USING TRANSISTORS IN RADIO ELECTRONIC EQUIPMENT.
All the advantages of semiconductor devices, which make it possible to create extremely economical, small-sized and reliable equipment, can be minimized if their specific features are not taken into account during its development, manufacture and operation.
High reliability of electronic equipment can be ensured only by taking into account such factors as the spread of transistor parameters, temperature instability and the dependence of their parameters on the operating mode, as well as changes in transistor parameters during the operation of electronic equipment.
The transistors listed in the reference book are general-purpose transistors. They retain their parameters within established limits under operating and storage conditions typical for various types and equipment classes
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FROM THE COMPILER
The directory is intended for a wide range of users from developers of radio-electronic devices to radio amateurs. The reference book presents the main electrical parameters of semiconductor diodes of wide application. For compactness and ease of use of this reference book, it uses tabular form presentation of information. In addition to electrical parameters, the reference book provides overall and connection dimensions, color coding, as well as typical applications.
The reference book contains parameters of diodes scattered throughout the domestic literature. Since the main principle in compiling the reference book was the completeness of the nomenclature, for some devices only a few parameters are given (which were given in a scientific article by the developers of the device). As it appears additional information, it was included in the directory.
For some devices, instead of limit parameters, typical parameters are given, when information about limit parameters is not available, but there is information about typical values.
How did this guide come about?
In the mid-70s, the author was faced with the lack of a reference book that suited himself and his colleagues in his work. Existing directories had many shortcomings, the most obvious of which are described below.
1. Greater redundancy:
a) Many reference books had a lot of graphs that were either described quite well by theoretical curves or reflected insignificant dependencies;
b) Most developers are not interested in such parameters as storage time in a warehouse and the degree of resistance of semiconductor devices against the effects of mold and fungi;
c) From 10% to 30% of the volume of reference books was occupied by well-known things - symbols on electrical diagrams, classification of devices and similar concepts repeatedly described in various literature.
2. Incompleteness long term passing through publishers led to the rapid obsolescence of the reference book. Most of the compilers gravitated towards a certain circle of manufacturers of semiconductor devices, and if the products of one manufacturer were presented quite fully, then the products of another manufacturer did not include new developments. To work, I had to use several reference books at the same time (especially since different compilers included different quantities parameters known for a given device) and a number of journal articles that described new semiconductor devices.
3. Inconvenient to use - most compilers introduced a breakdown of the directory into parts according to various criteria. In addition, very often the material was further grouped within a section. All this significantly complicated the search for the right device and especially the comparison of several semiconductor devices according to a number of parameters.
4. Unreliability - during the publishing process, errors accumulated in any reference book. If errors in regular text are easily detected during proofreading, then errors in numerical information Even by a specialist they are difficult to detect.
All the reasons described prompted us to compile a reference book more convenient for the developer of electronic equipment. Thanks to its compact form, the directory is quite cheap and satisfies most needs. If the developer needs more detailed characteristics of a product (this happens quite rarely), he can always turn to either a specialized publication or an industry standard. In his daily work, this little book is enough for him.
The author hopes that users of this directory will not be disappointed in their choice.
The directory was compiled in 1991, translated into HTML in 2000, redesigned in 2001.
It does not claim to be a comprehensive presentation of information, but is useful as a reference material that is easy to quickly find necessary information. The directory can be very useful to engineering and technical workers, radio amateurs, technicians, students of technical colleges and universities while completing coursework and diploma work. Important feature the directory is free for non-commercial use - it is distributed throughout freeware licenses. The information contained in the directory belongs to the category of verified, reliable materials.
The information presented in the directory has been double-checked. However, despite this, complete absence Typos are not guaranteed, although every effort has been made to eliminate them. In the reference data given in the literature, the parameters of the same part often have close, but not equal values under the same reading conditions. In this case, I indicated those parameter values that coincided with the parameter values accepted in the greatest number literature. In rare cases, some characteristics of parts were re-measured on mock-ups.
It is necessary to understand that different manufacturing plants produce parts under the same brand, the parameters of which may vary slightly. Therefore, if you see a part in this reference book, the parameters of which differ slightly from the parameters of the same part in another reference book, do not be surprised. So, for example, transistors of the KT315 type have, according to the literature, some overall dimensions, according to others, and others are indicated in the data. The real transistors I bought in the store had the fourth overall dimensions, coinciding with those given in the federal technical conditions. The drawings given in the reference book are drawings, not drawings, and are intended only for a better understanding appearance, pinouts and sizes of semiconductor devices. To write the first edition this guide Six months of painstaking work were spent, but much more time was spent verifying the data contained in it. I hope that your use of the directory will be useful and enjoyable.
1. Introduction
1.1 Basic standards for semiconductor devices
1.2 Classification of diodes
1.3 Classification of transistors
1.4 Classification of microcircuits
2 List of accepted abbreviations
3 Diodes
3.1 Rectifier diodes
3.2 Diode assemblies
3.3 LEDs
3.4 Seven-segment indicators
3.5 Optocouplers
3.6 Zener diodes
3.7 Varicaps
3.8 Tunnel diodes
3.9 Photos of the diode assembly, diodes, zener diode, LED, optocoupler
4 Thyristors
4.1 Pulse thyristors
4.2 Diode thyristors
4.3 Optothyristors
4.4 Photos of different thyristors
5 Transistors
5.1 Bipolar transistors
5.2 Unijunction transistors
5.3 Dual emitter transistors
5.4 Phototransistors
5.5 Field effect transistors
5.6 Drawings of transistor pinouts
5.7 Photos of different transistors
6 Integrated circuits
6.1 Microcircuit voltage stabilizers
6.2 Operational amplifiers
6.3 K174 series microcircuits
6.4 Digital chips
6.5 Drawings of microcircuit pinouts
6.6 Photos of different microcircuits
7 Specification numbers for some devices
Applications
Appendix No. 1. Deciphering the codes of some thyristors, transistors and stabilizer ICs
Appendix No. 2. Decoding the codes of some diodes
